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| GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Output Characteristics 70 60 50 40 30 20 10 VGS = 2.5V 0 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 3.0V 10V 6.0V 4.5V 60 4.0V 3.5V 70 VDS = 10V Fig. 2 - Transfer Characteristics ID -- Drain Source Current (A) ID -- Drain Current (A) 50 40 TJ = 125C 30 --55C 20 25C 10 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 - Threshold Voltage vs. Temperature 1.8 ID = 250A 0.014 0.012 Fig. 4 - On-Resistance vs. Drain Current VGS(th) -- Threshold Voltage (V) RDS(ON) -- On-Resistance () 1.6 1.4 1.2 0.01 VGS = 4.5V 0.008 0.006 VGS = 10V 0.004 0.002 0 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 0 20 40 60 80 100 TJ -- Junction Temperature (C) ID -- Drain Current (A) Fig. 5 - On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 35A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 6 - On-Resistance vs. Gate-to-Source Voltage 0.03 ID = 35A 10 Fig. 7 - Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 15V ID = 35A 8 RDS(ON) -- On-Resistance () 0.025 0.02 6 0.015 TJ = 125C 4 0.01 0.005 25C 2 0 2 4 6 8 10 0 0 10 20 30 40 50 60 70 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 - Capacitance 4500 4000 3500 Ciss f = 1MHZ VGS = 0V 100 Fig. 9 - Source-Drain Diode Forward Voltage VGS = 0V 10 C -- Capacitance (pF) 3000 2500 2000 1500 1000 500 0 0 5 Crss Coss IS -- Source Current (A) 1 TJ = 125C 0.1 25C --55C 10 15 20 25 30 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GFB70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 10 - Breakdown Voltage vs. Junction Temperature 40 1 Fig. 11 - Thermal Impedance D = 0.5 39 RJA (norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (V) ID = 250A 0.2 PDM 0.1 0.1 0.05 Single Pulse t1 t2 1. Duty Cycle, D = t1/t2 2. RJC (t) = RJC(norm) *RJC 3. RJC = 2.0C/W 4. TJ - TC = PDM * RJC (t) 0.01 0.0001 0.001 0.01 0.1 1 10 38 37 36 35 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) Pulse Duration (sec.) Fig. 12 - Power vs. Pulse Duration 1000 Single Pulse RJC = 2.0C/W TC = 25C 1000 Fig. 13 - Maximum Safe Operating Area 800 ID -- Drain Current (A) 10 100 Power (W) 600 RD S( ON Lim ) it 1m 10 m s 0 s s 400 10 VGS = 10V Single Pulse RJC = 2.0 C/W TC = 25C 0.1 1 100ms DC 200 0 0.0001 0.001 0.01 0.1 1 10 1 10 100 Pulse Duration (sec.) VDS -- Drain-Source Voltage (V) |
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